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4 December 2018 Mid-infrared quantum cascade lasers
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Proceedings Volume 10974, Laser Technology 2018: Progress and Applications of Lasers; 1097409 (2018)
Event: Thirteenth Symposium on Laser Technology, 2018, Jastarnia, Poland
We report recent results of works on quantum cascade lasers at the Institute of Electron Technology. During that time we have developed technology of lasers emitting at wavelengths 9.0–9.5 μm and 4.7 μm, based on InGaAs/AlGaAs/GaAs and InAlAs/InGaAs/InP heterostructures; both lattice matched and strain compensated. The structures were grown by molecular beam epitaxy MBE and by metalorganic vapor phase epitaxy MOVPE. The InGaAs/AlGaAs/GaAs lasers were grown by MBE. For InP based lasers three types of structures were investigated; the one grown exclusively by MBE without MOVPE overgrowth, the second fabricated by hybrid approach combining MBE grown AlInAs/InGaAs active region with MOVPE grown InP top waveguide layer and the third one with both the top and the bottom InP waveguide grown by MOVPE. Regardless of the waveguide construction, the active region was grown by MBE in every case. The lasers were fabricated in double trench geometry using standard processing technology. The buried heterostructure lasers were also investigated.
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Maciej Bugajski, Dorota Pierścińska, Piotr Gutowski, Kamil Pierściński, Grzegorz Sobczak, Kamil Janus, Iwona Sankowska, Krzysztof Michalak, Krzysztof Chmielewski, Joanna Branas, and Aleksander Kuźmicz "Mid-infrared quantum cascade lasers", Proc. SPIE 10974, Laser Technology 2018: Progress and Applications of Lasers, 1097409 (4 December 2018);

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