4 December 2018 New structure of semiconductor lasers: quantum-cascade vertical-cavity surface-emitting laser (QC VCSEL)
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Proceedings Volume 10974, Laser Technology 2018: Progress and Applications of Lasers; 109740A (2018) https://doi.org/10.1117/12.2519617
Event: Thirteenth Symposium on Laser Technology, 2018, Jastarnia, Poland
Abstract
A new structure of semiconductor lasers called the quantum-cascade vertical-cavity surface emitting laser (QC VCSEL) is proposed in the present paper. A structure of the QC VCSEL is a cross of the quantum-cascade laser (QCL) and the vertical-cavity surface-emitting laser (VCSEL). The QC VCSEL is expected to demonstrate important advantages of laser emission of both the QCL and the VCSEL without their drawbacks. In the QC VCSEL, the monolithic highcontrast grating (MHCG) structure is applied to cope with the fundamental requirement of the polarization direction of the electro-magnetic radiation perpendicular to the quantum cascade (QC) necessary to initiate within it the stimulated emission. The QC VCSEL structure recommended in the present paper is a result of the advanced modeling with the aid of our comprehensive self-consistent optical-electrical model.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Włodzimierz Nakwaski, Sandra Grzempa, Maciej Dems, and Tomasz Czyszanowski "New structure of semiconductor lasers: quantum-cascade vertical-cavity surface-emitting laser (QC VCSEL)", Proc. SPIE 10974, Laser Technology 2018: Progress and Applications of Lasers, 109740A (4 December 2018); doi: 10.1117/12.2519617; https://doi.org/10.1117/12.2519617
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