Translator Disclaimer
13 May 2019 High energy neutron irradiation effects on molecular beam epitaxy HgCdTe-based focal plane arrays and cameras
Author Affiliations +
Abstract
HgCdTe is one of the most important materials for fabrication of infrared detectors and focal plane arrays (FPAs) deployed in environments where high energy particle, such as protons and neutrons, are present. We designed and fabricated HgCdTe-based FPAs that can be used in high neutron radiation environment and we measured their characteristics. The influence of the radiation on the infrared FPAs and cameras are presented. HgCdTe material and devices are capable of maintaining high performances under high energy neutron irradiation environment. For the MWIR FPA directly facing 2.59×108 n/cm2·s neutron flux beam (with the highest energy 66 MeV) for 1 hour, the noise equivalent differential temperature (NEDT) increased ~ 8 times after irradiation. However NEDT decreased to 33 mK (compared to the original value of 21 mK) after one warming-up (to room temperature) and cooling-down cycle. The NEDT for the MWIR FPAs mounted parallel to the beam did not degrade (16 mK and 28 mK before irradiation, changed to 18 mK and 26 mK after irradiation, respectively).
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Chang and S. Velicu "High energy neutron irradiation effects on molecular beam epitaxy HgCdTe-based focal plane arrays and cameras", Proc. SPIE 10980, Image Sensing Technologies: Materials, Devices, Systems, and Applications VI, 109800V (13 May 2019); https://doi.org/10.1117/12.2521311
PROCEEDINGS
10 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Large-format MWIR and LWIR detectors at AIM
Proceedings of SPIE (June 18 2013)
HDVIP five-micron pitch HgCdTe focal plane arrays
Proceedings of SPIE (June 24 2014)
Next decade in infrared detectors
Proceedings of SPIE (October 09 2017)
SOFRADIR IR detectors for LW applications
Proceedings of SPIE (February 19 2004)
Fifty years of HgCdTe at Texas Instruments and beyond
Proceedings of SPIE (May 07 2009)

Back to Top