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7 May 2019 Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers
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Abstract
Third generation of infrared imagers demand performances for higher detectivity, higher operating temperature, higher resolution, and multi-color detection all accomplished with better yield and lower manufacturing costs. Antimonide-based gap-engineered Type-II superlattices (T2SLs) material system is considered as a potential alternative for Mercury- Cadmium-Telluride (HgCdTe) technology in all different infrared detection regimes from short to very long wavelengths for the third generation of infrared imagers. This is due to the incredible growth in the understanding of its material properties and improvement of device processing which leads to design and fabrication of better devices. We will present the most recent research results on Antimonide-based gap-engineered Type-II superlattices, such as high-performance dual-band SWIR/MWIR photo-detectors and focal plane arrays for different infrared regimes, toward the third generation of infrared imaging systems at the Center for Quantum Devices. Comparing metal-organic chemical vapor deposition (MOCVD), vs molecular beam epitaxy (MBE).
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Manijeh Razeghi, Arash Dehzangi, Donghai Wu, Ryan McClintock, Yiyun Zhang, Quentin Durlin, Jiakai Li, and Fanfei Meng "Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers", Proc. SPIE 11002, Infrared Technology and Applications XLV, 110020G (7 May 2019); https://doi.org/10.1117/12.2521173
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Cited by 7 scholarly publications.
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KEYWORDS
Photodetectors

Antimony

Superlattices

Quantum efficiency

Indium arsenide

Imaging systems

Absorption

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