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7 May 2019 GaSb-based infrared photodetector structures grown on Ge-Si substrates via metamorphic buffers
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GaSb-based infrared (IR) photodetector technology progression is toward larger-format focal plane arrays (FPAs). This requires a performance-based and cost-based manufacturing process on larger diameter substrates for improved throughput, volume, and yield. IQE has demonstrated molecular beam epitaxy (MBE) growth processes for barrier-design detectors (nBn) in multi-wafer configurations on 4-inch and 5-inch diameter GaSb substrates, and via a metamorphic process on 4-inch and 6-inch GaAs substrates. Recently we took the next step in this progression, growing nBn detectors on 6-inch Si substrates coated with CVD-grown Ge, opening the door for potential integration with Si-based electronic circuitry. Here, we compare the epiwafer characteristics (morphology, x-ray, PL) and diode performance (turn-on, QE, cutoff wavelength) of this M-nBn on Ge-Si with the same M-nBn on GaAs and the corresponding nBn structure grown on native GaSb substrate. Similar performance was obtained on all three types of substrates. We also present FPA data based on a 640×512 pixel, 15 μm pitch process without substrate removal, where QE ~ 80%, NE▵T < 20 mK, and operability <99% was demonstrated. The results represent an important technological path toward next-generation large-format IR detector array applications.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joel M. Fastenau, Dmitri Lubyshev, Scott A. Nelson, Michael Kattner, Phillip Frey, Matt Fetters, Joe Zeng, Amy W. K. Liu, Aled O. Morgan, Stuart A. Edwards, Rich Dennis, Kim Beech, Doug Burrows, Kelly Patnaude, Ross Faska, Jason Bundas, Axel Reisinger, Mani Sundaram, and Mark J. Furlong "GaSb-based infrared photodetector structures grown on Ge-Si substrates via metamorphic buffers", Proc. SPIE 11002, Infrared Technology and Applications XLV, 110020M (7 May 2019);

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