14 August 1989 Planar GaAs And GaAs/A10.3Ga0.7As Schottky Barrier Photodiodes With High-Speed And High-Sensitivity
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Abstract
Planar GaAs and GaAs/A103Ga0.7As Schottky barrier photodiodes with high-speed and high-sensitivity have been fabricated and characterized. In order to improves the sensitivity of photo-diodes, surface passivation and antireflection coatings have been performed using various dielectric films, such as Si02, Si3N4, and polyimide. The internal quantum efficiency of 60% to 77% and the responsivity of 0.47 A/W to 0.6 A/W were measured for the wavelength range of 0.5 μm to 0.84 μm. A rise time of 8.5 ps and a 3-dB cutoff frequency of 42 GHz were measured for the GaAs/A10.3Ga0.7As photodiode, whereas 15 ps and 24 GHz were measured for the GaAs photodiode.
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D. H. Lee, D. H. Lee, Sheng Li, Sheng Li, S. J. Lee, S. J. Lee, N. G. Paulter, N. G. Paulter, } "Planar GaAs And GaAs/A10.3Ga0.7As Schottky Barrier Photodiodes With High-Speed And High-Sensitivity", Proc. SPIE 1102, Optical Technology for Microwave Applications IV, (14 August 1989); doi: 10.1117/12.960537; https://doi.org/10.1117/12.960537
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