Paper
15 March 2019 Static and dynamic spin-torque-diode sensitivity induced by the thermoelectric charge and spin currents in magnetic tunnel junctions
Gleb D. Demin, Anatoly F. Popkov
Author Affiliations +
Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 110220B (2019) https://doi.org/10.1117/12.2522526
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation
Abstract
Based on the quantum-mechanical transport calculations of the charge and spin fluxes associated with the inhomogeneous thermal heating of three-dimensional structure of MTJ by the input RF microwave power, finite-element analysis of the thermal contribution to the spin-torque sensitivity of MTJ was carried out in the case of zero bias current. Within the magnon-induced spin-transfer torque model, the amplification of DC rectifying voltage in the spin-torque diode initiated by the spin pumping to the tunnel barrier from magnons was also estimated. The results obtained can be used for the development of new types of microwave detectors based on spin thermoelectric effects in MTJ.
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Gleb D. Demin and Anatoly F. Popkov "Static and dynamic spin-torque-diode sensitivity induced by the thermoelectric charge and spin currents in magnetic tunnel junctions", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110220B (15 March 2019); https://doi.org/10.1117/12.2522526
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KEYWORDS
Microwave radiation

Diodes

Magnetism

Ferromagnetics

Thermoelectric materials

Resistance

Electrodes

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