Scalability analysis of magnetic-nano-junction-based STT-MRAM towards sub-20-nm technology nodes

A. V. Popov; G. D. Demin; A. F. Popkov

doi:10.1117/12.2522478

15 March 2019 Scalability analysis of magnetic-nano-junction-based STT-MRAM towards sub-20-nm technology nodes

A. V. Popov, G. D. Demin, A. F. Popkov

Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 110220C (2019) https://doi.org/10.1117/12.2522478
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation

Abstract

Here we describe SPICE-compatible compact model of the nano-sized magnetic junction for STT-MRAM at technology nodes beyond 90 nm, where the impact of thermal stability factor and magnetotransport size effects should be taken into account at sub-20 nm dimensions. Within this model it was found that the spatial quantization of the spin-transfer torques which occurs in the magnetic nanobridge based on spin-valve junction (SVJ), when scaling down the nanobridge size below 10 nm, leads to several times higher switching speed, rather than in the case of using magnetic tunnel junctions (MTJ) at the same design rule. Implementation of the current-induced magnetization dynamics into the SPICE model of the nano-sized magnetic junction is based on the equivalent circuit for solving the Landau-Lifshitz-GilbertSlonczewski (LLGS) equation with the effective terms describing the microscopic behavior of spin-transfer torques. This model can be useful for predictive simulation of STT-MRAM performance at advanced technology nodes.

Citation Download Citation

A. V. Popov, G. D. Demin, and A. F. Popkov "Scalability analysis of magnetic-nano-junction-based STT-MRAM towards sub-20-nm technology nodes", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110220C (15 March 2019); https://doi.org/10.1117/12.2522478

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