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15 March 2019 Investigations of the resistive switching of the TiN-TiO2-SiO2-W memristors in the oxygen atmosphere with varying pressure
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Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 110220D (2019) https://doi.org/10.1117/12.2520434
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation
Abstract
In this work we have manufactured and studied memristors based on TiN-TiO2-SiO2-W open sandwich structures on Si substrates. We have built an experimental setup and developed a technique of the memristor resistive switching investigations in the controlled oxygen atmosphere within the pressure range of 0.0001–750 Torr. The resistive switching of the studied memory elements was carried out using voltage pulses with varying limitation current and depending on the oxygen pressure. As a result, we have found that the memory element resistive switching to the highconductivity “ON” state takes place below a certain threshold oxygen pressure, which has a non-trivial dependence on the limitation current.
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E. S. Gorlachev, V. M. Mordvintsev, and S. E. Kudryavtsev "Investigations of the resistive switching of the TiN-TiO2-SiO2-W memristors in the oxygen atmosphere with varying pressure", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110220D (15 March 2019); doi: 10.1117/12.2520434; https://doi.org/10.1117/12.2520434
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