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15 March 2019 Nanoscale profiling and memristor effect of ZnO thin films for RRAM and neuromorphic devices application
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Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 110220E (2019) https://doi.org/10.1117/12.2522322
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation
Abstract
Memristor effect in ZnO thin films was investigated. It was shown, that increase in the number of laser pulses during the formation of a thin ZnO film from 1000 to 3000 leads to increase resistance of ZnO film in the high resistance state (HRS) from 28.31±8.27 kΩ to 1943.53±123.11 kΩ and decrease resistance of ZnO film in the low resistance state (LRS) from 3.85±2.15 kΩ to 3.22±1.32 kΩ, respectively. Memristor structure fabrication technique was developed. Al2O3/TiN/ZnO/Ti memristor structure was fabricated and investigated. Resistive switching from HRS to LRS occurred at 0.4±0.1 V, and from LRS to HRS at -0.72±0.2 V. Endurance test shown that HRS is 72.41±6.22 kΩ, LRS is 1.05±0.32 kΩ. It was shown, that HRS/LRS ratio was about 69.7 at read voltage 0.3 V. As a result, Al2O3/TiN/ZnO/Ti memristor structure fabrication allowed to decrease switching voltage from 3.2±0.6 V to 0.4±0.1 V for SET, and from -3.5±1.1 V to -0.72±0.2 V for RESET, decrease current from 0.9±0.4 mA to 5.2±2.2 μA, and get less resistance dispersion, than Al2O3/TiN/ZnO structure.
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Viktor S. Klimin, Roman V. Tominov, Vadim I. Avilov, Denis D. Dukhan, Alexey A. Rezvan, Evgeny G. Zamburg, Vladimir A. Smirnov, and Oleg А. Ageev "Nanoscale profiling and memristor effect of ZnO thin films for RRAM and neuromorphic devices application ", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110220E (15 March 2019); doi: 10.1117/12.2522322; https://doi.org/10.1117/12.2522322
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