A linear “extrinsic” compact model for short-channel MOSFET drain current asymptotic dependence on drain bias in saturation regime

V. Turin; R. Shkarlat; V. Poyarkov; O. Kshensky; G. Zebrev; B. Iñiguez; M. Shur

doi:10.1117/12.2521880

15 March 2019 A linear “extrinsic” compact model for short-channel MOSFET drain current asymptotic dependence on drain bias in saturation regime

V. Turin, R. Shkarlat, V. Poyarkov, O. Kshensky, G. Zebrev, B. Iñiguez, M. Shur

Author Affiliations +

Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 110220H (2019) https://doi.org/10.1117/12.2521880
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation

Abstract

We derived the equation for the drain current of a short-channel MOSFET with nonzero differential conductance in saturation regime describing its nonlinear dependence on “extrinsic” drain bias and accounting for the parasitic and contact series resistances. This implicit equation could be numerically solved in the entire range of the drain biases. We have also derived the equation for the differential conductance of the “extrinsic” MOSFET in the saturation regime. Finally, we have proposed a linear approximation for asymptotic dependence of the “extrinsic” MOSFET drain current on “extrinsic” drain bias in saturation regime.

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V. Turin, R. Shkarlat, V. Poyarkov, O. Kshensky, G. Zebrev, B. Iñiguez, and M. Shur "A linear “extrinsic” compact model for short-channel MOSFET drain current asymptotic dependence on drain bias in saturation regime", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110220H (15 March 2019); https://doi.org/10.1117/12.2521880

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