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15 March 2019 TCAD-based performance analysis of nanoscale vacuum field-emission transistors at advanced technology nodes
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Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 110220O (2019) https://doi.org/10.1117/12.2522483
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation
Abstract
Full fabrication process of nanoscale vacuum channel and gate-all-around nanowire transistors at the 45, 32 and 22 nm technology nodes was simulated in Silvaco TCAD. Comparative analysis of operation modes was made on the basis of the obtained structures. It was shown that nanoscale gate-all-around transistor has sufficiently low power consumption while vacuum channel field effect transistor makes it possible to achieve performance that exceeds performance which can be obtained from the transistor with semiconductor channel. The combination of the above technologies can serve as approach to the creation of low-power and high-speed nanoscale vacuum devices using established complementary metal-oxide-semiconductor (CMOS) technology.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. D. Evsikov, N. A. Djuzhev, G. D. Demin, and M. A. Makhiboroda "TCAD-based performance analysis of nanoscale vacuum field-emission transistors at advanced technology nodes", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110220O (15 March 2019); https://doi.org/10.1117/12.2522483
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