Paper
15 March 2019 Silicon nanobridge as a high quality mechanical resonator
D. E. Presnov, A. A. Dorofeev, I. V. Bozhev, A. S. Trifonov, S. G. Kafanov, Yu. A. Pashkin, V. A. Krupenin
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Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 110220V (2019) https://doi.org/10.1117/12.2521034
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation
Abstract
The paper presents details of the fabricating technology of nanoscale mechanical resonators based on suspended silicon nanowires. The structures were made from silicon on insulator material, the thickness of the upper layer of silicon is 110 nm, the thickness of silicon oxide is 200 nm. Fabrication process contains standard CMOS compatible technologies only: electron lithography with positive resist, reactive ion and liquid etching, electron beam deposition of thin films. The presented structures can be used as sensors of mass, displacement, acceleration, pressure with extremely high sensitivity
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. E. Presnov, A. A. Dorofeev, I. V. Bozhev, A. S. Trifonov, S. G. Kafanov, Yu. A. Pashkin, and V. A. Krupenin "Silicon nanobridge as a high quality mechanical resonator", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110220V (15 March 2019); https://doi.org/10.1117/12.2521034
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KEYWORDS
Silicon

Resonators

Nanowires

Photomasks

Nanoelectromechanical systems

Nanolithography

Sensors

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