Silicon oxides and silicon nitrides: structure, properties and applications in memristors

V. A. Volodin; G. N. Kamaev; V. N. Kruchinin; V. A. Gritsenko

doi:10.1117/12.2521759

15 March 2019 Silicon oxides and silicon nitrides: structure, properties and applications in memristors

V. A. Volodin, G. N. Kamaev, V. N. Kruchinin, V. A. Gritsenko

Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 1102212 (2019) https://doi.org/10.1117/12.2521759
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation

Abstract

The capacity of memory matrices grows exponentially, but in many approaches the degree of integration of memory elements already reaches physical limits, which stimulates research into the development of new physical principles and new materials for memory elements. Memristors are very promising elements of memory. The memristors are the basis for high-speed, non-volatile, radiation-resistant flash memory matrices of the new generation. The SiO_x (0.3<x≤2) films of various stoichiometry were prepared using two methods: 1) evaporation of Si, SiO and SiO₂ targets and deposition in high vacuum; 2) plasma enhanced chemical vapor deposition (PECVD). The SiN_x (0.5<x≤4/3) films were deposited using PECVD. Raman scattering spectroscopy, visible and infrared (IR) absorbance spectroscopy and spectral ellipsometry and electro-physical methods were used for studies of the films. According to Raman spectroscopy data, the as-deposited SiN_x (x<1.1) contain amorphous Si clusters, high temperature annealings lead to crystallization of the clusters and forming of Si nanocrystals in such films. As for SiOx films, amorphous Si clusters were observed in asdeposited films with x≤1. These data were confirmed from analysis of ellipsometry data. The current-voltage (I-V) characteristics of the films were studied. Effects of switching from high resistance state (HRS) to low resistance state (LRS) were observed for SiO_x based films. These switching can be used in memristors.

Citation Download Citation

V. A. Volodin, G. N. Kamaev, V. N. Kruchinin, and V. A. Gritsenko "Silicon oxides and silicon nitrides: structure, properties and applications in memristors", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102212 (15 March 2019); https://doi.org/10.1117/12.2521759

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available