Luminescent properties of GeOx thin films and GeO/SiO2 heterostructures modified with swift heavy ions

S. G. Cherkova; V. A. Volodin; V. A. Skuratov; M. Stoffel; H. Rinnert; M. Vergnat

doi:10.1117/12.2521696

15 March 2019 Luminescent properties of GeO_x thin films and GeO/SiO₂ heterostructures modified with swift heavy ions

S. G. Cherkova, V. A. Volodin, V. A. Skuratov, M. Stoffel, H. Rinnert, M. Vergnat

Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 1102214 (2019) https://doi.org/10.1117/12.2521696
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation

Abstract

The luminescent and structural properties of GeO_x thin films and GeO/SiO₂ multilayer heterostructures, irradiated with 167 MeV Xe ions with fluencies up to 10¹³ cm⁻² , were studied. We report strong photoluminescence in visible range at room temperature, which is most probably due to Ge-related defect-induced radiative transitions. And infrared luminescence bands (from ~0.8 eV to ~1.2 eV) were observed in as-deposited and irradiated structures, which can be related to defects or defects complexes in Ge_xSi_yO₂ glass and partially in Si substrate. It was shown that swift heavy ion irradiation does not lead to the expected phase separation of germanium suboxide into germanium nanoclusters and GeO₂, but causes the intermixing of GeO/SiO₂ layers with the formation of Ge-O-Si bonds.

Citation Download Citation

S. G. Cherkova, V. A. Volodin, V. A. Skuratov, M. Stoffel, H. Rinnert, and M. Vergnat "Luminescent properties of GeO_x thin films and GeO/SiO₂ heterostructures modified with swift heavy ions", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102214 (15 March 2019); https://doi.org/10.1117/12.2521696

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