Structural and morphological properties of Ga(Al)N grown by MBE on 3C-SiC/Si (111) templates with off-axis and on-axis substrate orientation

K. A. Tsarik; S. D. Fedotov; V. K. Nevolin; V. N. Statsenko

doi:10.1117/12.2521959

15 March 2019 Structural and morphological properties of Ga(Al)N grown by MBE on 3C-SiC/Si (111) templates with off-axis and on-axis substrate orientation

K. A. Tsarik, S. D. Fedotov, V. K. Nevolin, V. N. Statsenko

Author Affiliations +

Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 1102219 (2019) https://doi.org/10.1117/12.2521959
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation

Abstract

Results of surface morphology and crystalline structure had shown for Ga(Al)N layers which was grown by MBE on 3С- SiC/Si(111) virtual substrates with on-axis and 4° off-axis orientation. Roughness values had increased up to ~7 nm for on-axis and to ~5 nm for 4° off-axis orientation after 560 nm deposition of GaN. Monocrystalline GaN(0002) was verified by ω-rocking curve measurement with FWHM 0.61-0.76° for on-axis and 0.55-0.65° for 4° off-axis orientation. Wafer bow shown the ascending up to ~18 μm for on-axis and ~12 μm for 4° off-axis orientation and tensile strain for all samples had been confirmed.

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K. A. Tsarik, S. D. Fedotov, V. K. Nevolin, and V. N. Statsenko "Structural and morphological properties of Ga(Al)N grown by MBE on 3C-SiC/Si (111) templates with off-axis and on-axis substrate orientation", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102219 (15 March 2019); https://doi.org/10.1117/12.2521959

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