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15 March 2019 The opportunities of Rutherford backscattering spectroscopy for analysis of multilayer nanometer thin film structures
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Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 110221I (2019) https://doi.org/10.1117/12.2522103
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation
Abstract
The results of study of multilayer thin film structure using Rutherford Backscattering Spectroscopy (RBS) are presented. The structure 5(nm)Ta/30CuN/5Ta/3NiFe/16IrMn/2.0CoFe/0.9Ru/2.5CoFeB/2MgO/2.5CoFeB/10Ta/7Ru on SiO2 was used as a test sample. This kind of structure is using for MRAM fabrication. The RBS analysis of such samples might appear significant difficulties during measurement and interpretation of RBS spectra because of small layers thickness and overlay of peaks of elements with close masses. It was found that using different experimental conditions for RBS analysis one can obtain information about the density and thickness of each layer. The data about these parameters are presented.
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V. Bachurin, A. Churilov, N. Melesov, E. Parshin, A. Rudy, and O. Trushin "The opportunities of Rutherford backscattering spectroscopy for analysis of multilayer nanometer thin film structures", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110221I (15 March 2019); https://doi.org/10.1117/12.2522103
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