Simulation of dry e-beam etching of resist and experimental evidence

A. Rogozhin; F. Sidorov; M. Bruk; E. Zhikharev

doi:10.1117/12.2522458

15 March 2019 Simulation of dry e-beam etching of resist and experimental evidence

A. Rogozhin, F. Sidorov, M. Bruk, E. Zhikharev

Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 110221O (2019) https://doi.org/10.1117/12.2522458
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation

Abstract

Formation of modern integrated circuits, micro- and nanostructures requires lithography resolution of less than 10 nm. The resolution of e-beam lithography is high enough but its throughput is extremely low. Mechanism of dry e-beam etching of resist has lots in common with chemical amplification of resist. It could be one of possible approaches to improve throughput of e-beam lithography. Dry e-beam etching of resist can provide sensitivity increase by a factor of hundreds. As a result, throughput of the e-beam lithography could be increased dramatically. Some structures obtained by the hybrid e-beam lithography (and exposure doses) are presented. For the simulation of electron tracks in PMMA/Si system “direct” Monte Carlo method is applied. In this method, all the dominant processes (elastic scattering, excitation, ionization and secondary electron generation for E < 20 keV) are simulated separately. The results of the simulation are presented.

Citation Download Citation

A. Rogozhin, F. Sidorov, M. Bruk, and E. Zhikharev "Simulation of dry e-beam etching of resist and experimental evidence", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110221O (15 March 2019); https://doi.org/10.1117/12.2522458

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