Fabrication of electrodes for a logic element based on a disordered dopant atoms network

S. A. Dagesyan; S. Yu. Ryzhenkova; D. E. Presnov; I. V. Sapkov; V. R. Gaydamachenko; G. A. Zharik; A. S. Stepanov

doi:10.1117/12.2522487

15 March 2019 Fabrication of electrodes for a logic element based on a disordered dopant atoms network

S. A. Dagesyan, S. Yu. Ryzhenkova, D. E. Presnov, I. V. Sapkov, V. R. Gaydamachenko, G. A. Zharik, A. S. Stepanov

Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 110221P (2019) https://doi.org/10.1117/12.2522487
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation

Abstract

Two laboratory methods of gold nanoelectrodes fabrication on the top of a silicon substrate were developed in this work. Both uses an electron-beam lithography. First one is based on a positive tone resist, a cold development and a lift-off technique. Second one is based on a negative tone resist and an ion etching. Methods comparison took into account the following results: obtained resolution, edge roughness and conductance between electrodes. As a result we conclude that only electrodes created by the lift-off technique are suitable for creation of a logic element based on a disordered dopant atoms network. The reason is a high conductance of a silicon after the ion etching.

Citation Download Citation

S. A. Dagesyan, S. Yu. Ryzhenkova, D. E. Presnov, I. V. Sapkov, V. R. Gaydamachenko, G. A. Zharik, and A. S. Stepanov "Fabrication of electrodes for a logic element based on a disordered dopant atoms network", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110221P (15 March 2019); https://doi.org/10.1117/12.2522487

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