Paper
15 March 2019 Mask formation on GaAs substrate by focused ion beams of Ga+ for plasma chemical etching
Viktor S. Klimin, Ivan N. Kots, Victoria V. Polyakova, Alexey A. Rezvan, Oleg A. Ageev
Author Affiliations +
Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 110221R (2019) https://doi.org/10.1117/12.2522332
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation
Abstract
This paper presents а masking layer formation using the focused ion beams method on the substrate surface of its own undoped gallium arsenide for subsequent plasma chemical etching. Focused ion beam was processed to create a mask for ion-induced plasma-chemical processing. The main parameters affecting the formation of nanoscale structures such as the accelerating voltage of a focused ion beam and the etching time in the plasma are investigated. With an increase in the etching time, the depth of the structures obtained decreased from 68 to 2.5 nm. The possibility of using this method for the formation of nanoscale structures without using liquid lithography is shown.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Viktor S. Klimin, Ivan N. Kots, Victoria V. Polyakova, Alexey A. Rezvan, and Oleg A. Ageev "Mask formation on GaAs substrate by focused ion beams of Ga+ for plasma chemical etching", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110221R (15 March 2019); https://doi.org/10.1117/12.2522332
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KEYWORDS
Plasma

Ion beams

Plasma etching

Gallium arsenide

Etching

Nanotechnology

Atomic force microscope

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