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15 March 2019 Synergistic effects of deformation and solid-state reactions in Si with buried glass layer initiated by annealing in non-isothermal reactor
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Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 110221T (2019) https://doi.org/10.1117/12.2521443
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation
Abstract
This study presents a scientific opinion on differences in formation of self-organizing dislocation structures in (100) - oriented Si specimens subjected to co-implantation by P+ and O2 + ions and 2-step annealing process. At the first step, the specimens were exposed to 5-minutes treatment in a non-isothermal reactor at 900 °С at a two directions of grad T. At the second step, a process of defects evolution continued in conventional isothermal furnace (1150 °С, 4 h). Depending on the direction of grad T at the first step, the defects evolution process led to the formation of two kinds of the self-organized dislocation structures, which are basically dissipative. A synergetic approach used in this experiment have ensured conditions of non-equilibrium, nonlinearity, instability, and irreversibility by creating the stress and temperature gradients, effects from excess point defects flows, and interactions between Si matrix and impurity atoms. Along with plastic deformation, this joint multi-parameter effect on Si crystal led to the creation of a set of unique structural defects.
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Yuri I. Denisenko " Synergistic effects of deformation and solid-state reactions in Si with buried glass layer initiated by annealing in non-isothermal reactor ", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110221T (15 March 2019); https://doi.org/10.1117/12.2521443
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