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15 March 2019 Plasma deposition of carbon-silicon nanocomposite for microelectromechanical applications
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Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 1102224 (2019) https://doi.org/10.1117/12.2522049
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation
Abstract
The paper presents the technology of forming a nanocomposite based on an array of vertically oriented carbon nanotubes and polycrystalline silicon. The material could be used in fabrication of inertial microelectromechanical system with high aspect ratio structure. Carbon nanotube arrays were grown and coated with a layer of polycrystalline silicon using plasma enhanced chemical vapor deposition. The purpose of the study is to determine experimental conditions for obtaining the nanocomposite with a minimum number of pores in the bulk. The deposition features of the nanocomposite with an intertube distance from 50 to 200 nm are determined. A test array of carbon nanorods (2.5μm in height, aspect ratio ~14) instead of nanotubes is formed for a quantitative analysis in the range of interrod spacing from 500 to 2000 nm. The average deposition rate of silicon at 600°C and 10 W was 15 nm/min on a substrate and 7-8 nm/min along the sidewalls.
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Evgeny Yu. Gusev, Julia Y. Jityaeva, Sergey A. Lisitsyn, and Oleg A. Ageev "Plasma deposition of carbon-silicon nanocomposite for microelectromechanical applications", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102224 (15 March 2019); https://doi.org/10.1117/12.2522049
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