Robust random number generator based on field effect transistor

F. Ablayev; S. N. Andrianov; D. V. Vahrushev; M. T. Ziatdinov; V. S. Romanov; A. A. Soloviev

doi:10.1117/12.2522433

15 March 2019 Robust random number generator based on field effect transistor

F. Ablayev, S. N. Andrianov, D. V. Vahrushev, M. T. Ziatdinov, V. S. Romanov, A. A. Soloviev

Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 1102229 (2019) https://doi.org/10.1117/12.2522433
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation

Abstract

Compact random number generator (RNG) is presented and demonstrated on the basis of field effect transistor connected in a such a way that avalanche electron current emerges when an input voltage exceeds the threshold value. The avalanche character of this phenomenon provides true randomness and large noise potential in wide spectral band at extremely small feeding electrical power. Created device is robust and it consists of compact elements with the possibility of digital signal acquisition from standard internal or external analogous to digital transducer. Created RNG has been tested. One hundred sequences each with 300000 bits length were tested using 15 separate tests of National Institute of Standards and Technology (NIST) with application of simple “linear post processing”. The results of testing are the following: all 100 sequences had passed NIST test series.

Citation Download Citation

F. Ablayev, S. N. Andrianov, D. V. Vahrushev, M. T. Ziatdinov, V. S. Romanov, and A. A. Soloviev "Robust random number generator based on field effect transistor", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102229 (15 March 2019); https://doi.org/10.1117/12.2522433

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