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12 March 2019 Analysis of SNR in 4-transistor backside-illuminated CMOS image sensor
Sheng-kai Wang, Chuan Jin, Kai Qiao, Gang-cheng Jiao, Hong-chang Cheng, Lei Yan
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Proceedings Volume 11023, Fifth Symposium on Novel Optoelectronic Detection Technology and Application; 110231P (2019) https://doi.org/10.1117/12.2521805
Event: Fifth Symposium on Novel Optoelectronic Detection Technology and Application, 2018, Xi'an, China
Abstract
Based on the study of working principle and making process of 4-transistor Backside-illuminated CMOS (4T BSI-CMOS), Signal-to-noise ratio (SNR) model are established and quantitative calculating formula is derived. In addition, factors of influencing SNR are analyzed. Two methods are presented to enhance the SNR, the one is optimizing structure of 4T BSI-CMOS image sensor to strengthen the signal and the other one is correlated double sampling to decrease fixed pattern noise (FPN). These results serve as useful guidelines to enhance the SNR of 4T BSI-CMOS and improve the image quality.
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Sheng-kai Wang, Chuan Jin, Kai Qiao, Gang-cheng Jiao, Hong-chang Cheng, and Lei Yan "Analysis of SNR in 4-transistor backside-illuminated CMOS image sensor", Proc. SPIE 11023, Fifth Symposium on Novel Optoelectronic Detection Technology and Application, 110231P (12 March 2019); https://doi.org/10.1117/12.2521805
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KEYWORDS
Signal to noise ratio
Image sensors
CMOS sensors
Photodiodes
Quantum efficiency
Signal processing
Silicon
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