Resistive switching memory devices based on all-inorganic perovskite CsPbBr3 quantum dot

Zhiliang Chen; Yating Zhang; Yu Yu; Mingxuan Cao; Yongli Che; Lufan Jin; Yifan Li; Qingyan Li; Tengteng Li; Haitao Dai; Junbo Yang; Jianquan Yao

doi:10.1117/12.2521479

12 March 2019 Resistive switching memory devices based on all-inorganic perovskite CsPbBr₃ quantum dot

Zhiliang Chen, Yating Zhang, Yu Yu, Mingxuan Cao , Yongli Che, Lufan Jin, Yifan Li, Qingyan Li , Tengteng Li, Haitao Dai, Junbo Yang, Jianquan Yao

Author Affiliations +

Proceedings Volume 11023, Fifth Symposium on Novel Optoelectronic Detection Technology and Application; 110234B (2019) https://doi.org/10.1117/12.2521479
Event: Fifth Symposium on Novel Optoelectronic Detection Technology and Application, 2018, Xi'an, China

Abstract

All-inorganic perovskite quantum dots (QDs) have widely used in a lot of micro-nano photoelectric devices. However, resistive random access memory (RRAM) devices based on All-inorganic perovskite QDs are relatively scarce. In this work, a RRAM, which exhibits the write-once-read-many-times (WORM) memory effect, based on CsPbBr₃ QDs was successfully fabricated by solution processed method at room temperature. The CsPbBr₃ QDs based memory shows great reproducibility, good data retention ability, irreversible electrical transition from the high resistance state (HRS) or OFF state to the low resistance state (LRS) or ON state and the resistance ratio (ON/OFF) can reach almost 107. To study the CsPbBr₃ QDs based WORM memory provides an opportunity to develop the next generation high-performance and stable WORM devices.

Citation Download Citation

Zhiliang Chen, Yating Zhang, Yu Yu, Mingxuan Cao , Yongli Che, Lufan Jin, Yifan Li, Qingyan Li , Tengteng Li, Haitao Dai, Junbo Yang, and Jianquan Yao "Resistive switching memory devices based on all-inorganic perovskite CsPbBr₃ quantum dot", Proc. SPIE 11023, Fifth Symposium on Novel Optoelectronic Detection Technology and Application, 110234B (12 March 2019); https://doi.org/10.1117/12.2521479

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available