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12 March 2019 Resistive switching memory devices based on all-inorganic perovskite CsPbBr3 quantum dot
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Abstract
All-inorganic perovskite quantum dots (QDs) have widely used in a lot of micro-nano photoelectric devices. However, resistive random access memory (RRAM) devices based on All-inorganic perovskite QDs are relatively scarce. In this work, a RRAM, which exhibits the write-once-read-many-times (WORM) memory effect, based on CsPbBr3 QDs was successfully fabricated by solution processed method at room temperature. The CsPbBr3 QDs based memory shows great reproducibility, good data retention ability, irreversible electrical transition from the high resistance state (HRS) or OFF state to the low resistance state (LRS) or ON state and the resistance ratio (ON/OFF) can reach almost 107. To study the CsPbBr3 QDs based WORM memory provides an opportunity to develop the next generation high-performance and stable WORM devices.
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Zhiliang Chen, Yating Zhang, Yu Yu, Mingxuan Cao , Yongli Che, Lufan Jin, Yifan Li, Qingyan Li , Tengteng Li, Haitao Dai, Junbo Yang, and Jianquan Yao "Resistive switching memory devices based on all-inorganic perovskite CsPbBr3 quantum dot", Proc. SPIE 11023, Fifth Symposium on Novel Optoelectronic Detection Technology and Application, 110234B (12 March 2019); https://doi.org/10.1117/12.2521479
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