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4 January 2019 Embedding of iron silicide nanocrystals into monocrystalline silicon: suppression of emersion effect
Evgeniy Chusovitin, Dmitry Goroshko, Sergey Dotsenko, Alexander Shevlyagin, Anton Gutakovskii, Nikolay Galkin
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Proceedings Volume 11024, Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics 2017; 1102402 (2019) https://doi.org/10.1117/12.2314675
Event: Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics 2017, 2017, Taipei, Taiwan
Abstract
The formation of iron silicide nanocrystals (NCs) and their embedding into monocrystalline silicon was studied. Solid phase epitaxy of 0.4 nm Fe at 630 °C resulted in formation of NCs consisted of β-FeSi2 and ε-FeSi phases. Annealing of NCs at 750 °C for 90 min led to transformation of β-FeSi2 and ε-FeSi into α-FeSi2. On the other hand, silicon layer growth over as-formed NCs, at the same temperature, resulted in formation of single phase NCs consisted of β-FeSi2. Silicon deposition rate proved to be the crucial point for a full embedding of NCs. The rate of 1 nm/min resulted in emersion of NCs to the surface during silicon overgrowth irrespective of Si cap layer thickness, while the rate of 8 nm/min led to the full embedding of β-FeSi2 NCs. Both incompletely and fully embedded β-FeSi2 NCs have epitaxial relationship and stress favorable for an indirect to direct band-gap transition at Y point.
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Evgeniy Chusovitin, Dmitry Goroshko, Sergey Dotsenko, Alexander Shevlyagin, Anton Gutakovskii, and Nikolay Galkin "Embedding of iron silicide nanocrystals into monocrystalline silicon: suppression of emersion effect", Proc. SPIE 11024, Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics 2017, 1102402 (4 January 2019); https://doi.org/10.1117/12.2314675
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KEYWORDS
Silicon
Iron
Nanocrystals
Transmission electron microscopy
Interfaces
Solid phase epitaxy
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