Sub-nanosecond gating of InGaAs/InP SPAD

Alberto Tosi; Mauro Buttafava; Marco Renna; Mirko Sanzaro

doi:10.1117/12.2525883

30 April 2019 Sub-nanosecond gating of InGaAs/InP SPAD

Alberto Tosi, Mauro Buttafava, Marco Renna, Mirko Sanzaro

Proceedings Volume 11027, Quantum Optics and Photon Counting 2019; 110270B (2019) https://doi.org/10.1117/12.2525883
Event: SPIE Optics + Optoelectronics, 2019, Prague, Czech Republic

Abstract

Time gating for SPADs is exploited either for increasing their maximum count rate or for detecting faint signals hidden by strong unwanted light pulses. Here we describe two short-gate techniques for high-speed photon counting with InGaAs/InP SPADs: i) a sinusoidal gating system at about 1.3 GHz, with very low afterpulsing and high count rate; ii) a SiGe integrated circuit for sub-nanosecond gating with < 200 ps rising/falling edges.

Citation Download Citation

Alberto Tosi, Mauro Buttafava, Marco Renna, and Mirko Sanzaro "Sub-nanosecond gating of InGaAs/InP SPAD", Proc. SPIE 11027, Quantum Optics and Photon Counting 2019, 110270B (30 April 2019); https://doi.org/10.1117/12.2525883

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