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11 April 2019 Spectral response filtering by lateral scanning of Silicon NSOM photodetector with subwavelength aperture
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Abstract
Persisting in the large trend to enhance the Near-field Scanning Optical Microscopy and the detection of evanescent waves, a silicon Schottky diode, shaped as a truncated trapezoid photodetector, and sharing a subwavelength pin-hole aperture, has been designed and simulated. Using Finite Elements Method and 3D advanced simulations, the detector has been horizontally shifted across a vertically oriented Gaussian beam, which is projected on top of the device. Electrooptical simulations have been conducted. These results are promising towards the fabrication of a new generation of photodetector devices.
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Avi Karsenty and Matityahu Karelits "Spectral response filtering by lateral scanning of Silicon NSOM photodetector with subwavelength aperture", Proc. SPIE 11028, Optical Sensors 2019, 110281J (11 April 2019); https://doi.org/10.1117/12.2520508
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