Transverse optical pumping of e-beam excited high-pressure He/Ar mixture with a laser diode array

Andrey Ionin; Aleksandr Drakin; Igor Kholin; Andrey L'dov; Gevork Mikaelyan; Dmitriy Sinitsin; Nikolay Ustinovskii; Dmitriy Zayarnyi

doi:10.1117/12.2521790

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3 January 2019 Transverse optical pumping of e-beam excited high-pressure He/Ar mixture with a laser diode array

Andrey Ionin, Aleksandr Drakin, Igor Kholin, Andrey L'dov, Gevork Mikaelyan, Dmitriy Sinitsin, Nikolay Ustinovskii, Dmitriy Zayarnyi

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Proceedings Volume 11042, XXII International Symposium on High Power Laser Systems and Applications; 1104205 (2019) https://doi.org/10.1117/12.2521790
Event: XXII International Symposium on High Power Laser Systems and Applications, 2018, Frascati, Italy

Abstract

An opportunity of developing a laser with optical pumping from metastable ArI levels produced by a relativistic electron beam in high-pressure He-Ar gas mixtures was studied. It was shown that high population and long lifetime of the 1s5 level of Ar atom and broad width (~ 10 nm) of the absorption spectral line made it possible to obtain the most optimal lasing conditions in the afterglow of electron beam pulse within the classical three-level pumping scheme. Rate constants for collisional quenching of low-lying 4s-levels of excited argon atom in He-Ar mixtures in the pressure range from 4.0 to 0.75 atm were measured. An increase of photoluminescence on the 2p₁₀-1s₅ transition (912.3 nm) upon application of transverse optical pumping with a laser diode array (811.5 nm) was observed. An application of a semi-transparent cavity resulted in a significant increase of this photoluminescence signal in the afterglow indicating amplified spontaneous emission.

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Andrey Ionin, Aleksandr Drakin, Igor Kholin, Andrey L'dov, Gevork Mikaelyan, Dmitriy Sinitsin, Nikolay Ustinovskii, and Dmitriy Zayarnyi "Transverse optical pumping of e-beam excited high-pressure He/Ar mixture with a laser diode array", Proc. SPIE 11042, XXII International Symposium on High Power Laser Systems and Applications, 1104205 (3 January 2019); https://doi.org/10.1117/12.2521790

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