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24 January 2019 Improved organic thin-film transistor performance by dielectric layer patterning
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Proceedings Volume 11043, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems; 1104314 (2019) https://doi.org/10.1117/12.2500286
Event: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, 2018, Skukuza, South Africa
Abstract
The Internet of Things (IoT) is a main driving force for research efforts in the area of low-cost electronics. Low-cost solutions for the upgrade of already existing everyday objects by sensors or RFID tags are needed. Key elements of such upgrading technologies are often thin-film transistors (TFTs). In this article we analysed the structurability of the commercially available, high-k dielectric ino® flex T3 by means of common used optical photolithographic techniques and wet-etching processes and its influence on the TFT performance. Furthermore, the impact of an alkanethiol treatment of the drain and source contacts on the charge carrier injection from the metal into the semiconducting layer was investigated. As active semiconductor a dithienothiophene (DTT) derivate was used.
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Thorsten Meyers, Julia Reker, Julian Temme, Fábio F. Vidor, Joachim Vollbrecht, Heinz Kitzerow, Jan Paradies, and Ulrich Hilleringmann "Improved organic thin-film transistor performance by dielectric layer patterning", Proc. SPIE 11043, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, 1104314 (24 January 2019); https://doi.org/10.1117/12.2500286
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