Fabrication of Anti Reflection Coating TiO2-SiO2 on Silicon Substrate with Pulsed Laser Deposition Method

Eframoktora R. G. Nelwan; Maria M. Suliyanti; Niki Prastomo

doi:10.1117/12.2503241

11 April 2019 Fabrication of anti-reflection coating TiO₂-SiO₂ on silicon substrate with pulsed laser deposition method

Eframoktora R. G. Nelwan, Maria M. Suliyanti, Niki Prastomo

Proceedings Volume 11044, Third International Seminar on Photonics, Optics, and Its Applications (ISPhOA 2018); 110440N (2019) https://doi.org/10.1117/12.2503241
Event: Third International Seminar on Photonics, Optics, and Its Applications (ISPhOA 2018), 2018, Surabaya, Indonesia

Abstract

Anti reflection coating (ARC) is used in solar cell that functions to increase the quantity of light absorption. To obtain maximum results would require a good combination between ARC’s materials and the synthesis technique. TiO₂-SiO₂ was used as ARC materials because it has good passivity and high refractive index value. Pulsed Laser Deposition (PLD) method was used for synthesis technique because it has high photon energy and high temperature. Characterization are done by using Field Effect Scanning Electron Microscope (FESEM), X-Ray Diffraction (XRD), and Ultraviolet-Visible (UV-Vis) Spectrophotometry. The best result, anti reflection coating TiO₂-SiO₂ successfully reduced the reflection value from 35.69% to 14.11% for silicon substrate. It was gained with the properties of laser’s wavelength at 532 nm, laser’s energy at 100 mJ, and deposition time at 20 seconds.

Citation Download Citation

Eframoktora R. G. Nelwan, Maria M. Suliyanti, and Niki Prastomo "Fabrication of anti-reflection coating TiO₂-SiO₂ on silicon substrate with pulsed laser deposition method", Proc. SPIE 11044, Third International Seminar on Photonics, Optics, and Its Applications (ISPhOA 2018), 110440N (11 April 2019); https://doi.org/10.1117/12.2503241

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