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30 August 1989 Laser-Induced Damage To Silicon CCD Imaging Sensors
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Laser-induced morphological and electrical changes to silicon CCD devices have been studied. The devices were poly-silicon gate Time Delay Integrating (TDI) CCD arrays of 2048x96 elements. The laser source for these experiments was a Q-switched Nd:YAG laser at 1.06 μm with 10 ns pulses at a 10 Hz repetition rate focused to an approximately 400 μm spot radius. Single pulse and multiple pulse damage behavior was studied. Both CCD arrays and diagnostic structures from the wafer periphery were tested. The additional diagnostic structures included poly-Si resistors and MOS-FET gates. Of the measurements made, it was found that drain-to-substrate and drain-to-source leakage currents and transconductance in FETs were the most sensitive parameters to laser-induced change. The onset of electrical parameter changes was observed as low as 0.2 J/cm2. Severe electrical parameter changes began at 0.5 J/cm2 and continued up to the onset of severe morphological damage at 1.0 J/cm2. Above this fluence, both poly-Si and aluminum interconnect lines were melted and broken.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael F. Becker, Chen-Zhi Zhang, Steve E. Watkins, and Rodger M. Walser "Laser-Induced Damage To Silicon CCD Imaging Sensors", Proc. SPIE 1105, Materials for Optical Switches, Isolators, and Limiters, (30 August 1989);


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