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24 January 2019 Output power improvements of antimonide quantum well laser diodes by rapid thermal annealing on the cavity coating films
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Proceedings Volume 11052, Third International Conference on Photonics and Optical Engineering; 110520Q (2019) https://doi.org/10.1117/12.2521803
Event: The International Conference on Photonics and Optical Engineering, 2018, Xi'an, China
Abstract
Special processing of rapid thermal annealing on the cavity coating films for 1950 nm wavelength antimonide quantum well Laser diodes are studied. The maximum output power of the laser is greatly improved by RTA process on cavity facet films from around 610mW to above 700mW. The power conversion efficiency is further improved by the simple process by 23.2% than that of the laser coated. And the laser devices become more reliable and have extended service life after the process.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sheng-Wen Xie, Cheng-Ao Yang, Ye Yuan, Shu-Shan Huang, Yi Zhang, Jin-ming Shang, Yu Zhang, Ying-Qiang Xu, and Zhi-Chuan Niu "Output power improvements of antimonide quantum well laser diodes by rapid thermal annealing on the cavity coating films", Proc. SPIE 11052, Third International Conference on Photonics and Optical Engineering, 110520Q (24 January 2019); https://doi.org/10.1117/12.2521803
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