12 September 1989 Angle-Resolved X-Ray Photoelectron Spectroscopy As A Noninvasive Characterization Technique For The Surface Region Of Processed (Hg, Cd)Te
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Abstract
The potential of angle-resolved x-ray photoelectron spectroscopy (ARXPS) for characterizing the surface region of pro-cessed compound semiconductor materials is explored with respect to depth-compositional profiling and with respect to assessing the crystalline surface structure. It is demonstrated by analyzing the sputtered surface region of a (Hg, Cd)Te wafer that ARXPS can readily distinguish between three different compositional zones regarding their sequence and their chemical nature in a depth region of about so A. The quantitative scaling of the depth profile is accomplished using a theoretical model of photoemission from a planar sample covered with two uniform overlayers. It is further demon-strated, by analyzing a (Hg, Cd)Te sample grown by liquid phase epitaxy on (111) oriented (Cd, Zn)Te, that azimuthal and polar variations in the anige-resolved photoemission of Hg, Cd and Te occur which are indicative of the phenome-non of x-ray photoelectron diffraction (XPD). The prominent maxima of the respective photoemissions were observed at three azimuthal angles (120° periodicity) for a polar angle of about 35°. A shift of 60° between the azimuthal maxima of the photoemission of Te and the metal atoms (Cd or Hg) is attributed to a reconstruction of the examined (111) surface.
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M. Seelmann-Eggebert, M. Seelmann-Eggebert, H. J. Richter, H. J. Richter, J. Ziegler, J. Ziegler, } "Angle-Resolved X-Ray Photoelectron Spectroscopy As A Noninvasive Characterization Technique For The Surface Region Of Processed (Hg, Cd)Te", Proc. SPIE 1106, Future Infrared Detector Materials, (12 September 1989); doi: 10.1117/12.960641; https://doi.org/10.1117/12.960641
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