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12 September 1989 Growth Of CdTe Crystals By The Heat Exchanger Method (HEMN)
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Abstract
The poor thermal conductivity of CdTe has prevented controlled directional solidification and, therefore, completely single crystal growth is not achieved on a routine basis. The Heat Exchanger Method (HE(TM)) has been adapted for the growth of 600 g, 5.5 cm diameter and 1300 g, 7.5 cm diameter CdTe ingots. Emphasis was placed on achieving controlled directional solidification. Unseeded crystal growth was carried out using presynthesized CdTe as meltstock and without the use of a separate Cd or Te reservoir to control stoichiometry. It was demonstrated that only two grains were formed and the structure was maintained during growth. Twinning was minimized and large twin-free samples could be obtained. The EPD values of CdTe were in the range of 103 to 5x105/cm2. Most of the material was p-type, but CdTe with 105 ohm-cm resistivity was grown. An absorption coefficient as low as 0.07/cm was measured showing that the crystals were suitable for CO2 laser modulator applications.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. P. Khattak and F. Schmid "Growth Of CdTe Crystals By The Heat Exchanger Method (HEMN)", Proc. SPIE 1106, Future Infrared Detector Materials, (12 September 1989); https://doi.org/10.1117/12.960628
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