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12 September 1989 (Hg,Zn)Te Among The Other Materials For IR Detection
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The advantages predicted for (Hg,Zn)Te over (Hg,Cd)Te are stressed. The(Hg,Zn)Te alloys are then situated, according to their properties in IR detection at 10.6 μm, among the other II-VI ternary alloys and some low dimensional III-V's. The different techniques used so far for MZT bulk and epitaxial growth are reviewed. The problem of substrates for the growth of MZT by liquid phase epitaxy is discussed. Finally recent results on MZT device performances, and mainly on the reliability of photodiodes, confirm the advantages predicted for MZT over MCT.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Triboulet, M. Bourdillot, A. Durand, and T. Duy Nguyen "(Hg,Zn)Te Among The Other Materials For IR Detection", Proc. SPIE 1106, Future Infrared Detector Materials, (12 September 1989);

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