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12 September 1989 Interface Properties Of Various Passivations Of HgCdTe
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Abstract
Various surface passivations of p-type Hg1-xCdxTe were studied to understand their interface properties and and their potential for device technology. Anodic oxide forms an inverted layer near the interface. This n-type skin layer exhibits extremely good n-type properties, which equal, and even surpass, bulk properties. The high electron mobility may be explained by quantization of the electron levels in the space-charge region, and the formation of a two dimensional electron gas near the interface. Thick (approx 500 Å) anodic sulfide generates a similar inversion layer. The charge density is proportional to the sulfide thickness. Carefully prepared thin (approx 100 Å) anodic sulfide films as well as ZnS coating on freshly etched sur-faces, form nearly Hatband conditions which are suitable for n+ on p diode technology. The surface recombination velocity, determined for these two passivations using the photoelectromagnetic effect, is shown to be similar at low temperatures, increasing with decreasing temperatures. The dominant trapping mechanism at the surface is similar to that in the bulk, and is probably mostly due to vacancies.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. E. Schacham and E. Finkman "Interface Properties Of Various Passivations Of HgCdTe", Proc. SPIE 1106, Future Infrared Detector Materials, (12 September 1989); https://doi.org/10.1117/12.960643
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