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12 September 1989 New Techniques For The Growth Of HgCdTe By Molecular Beam Epitaxy
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Abstract
We present in this review a brief appraisal of the current status of HgCdTe layers grown by Molecular Beam Epitaxy (MBE). Although this technique has produced unique material structures such as HgTe:CdTe superlattices and HglxCdxTe/Hgl-yCdyTe heterostructures, there are still significant problems in 'obtaining high quality detector materials. In this paper an attempt is made to identify some of the possible causes of these problems. These difficulties are divided into two classifications: problems related to the control over the growth technique, and the basic material science issues concerning the metallurgical properties of these alloys and the surface nucleation mechanisms responsible for epitaxy by MBE. Following this review, some of the work performed at Georgia Tech to provide answers to the identified problems is presented. An argument is then made for the growth of these alloys by a photon-assisted chemical beam epitaxy (PACBE) technique which is shown to provide the capability for both fundamental studies of surface nucleation kinetics, and we believe the growth of high-quality materials.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. J. Summers, R. G. Benz II, B. K. Wagner, J. D. Benson, and D. Rajavel "New Techniques For The Growth Of HgCdTe By Molecular Beam Epitaxy", Proc. SPIE 1106, Future Infrared Detector Materials, (12 September 1989); https://doi.org/10.1117/12.960624
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