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12 September 1989 Planar Heterojunctions Made On MBE Grown Mercury Cadmium Telluride Using Low Energy Ion Sputtering
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Abstract
Planar heterojunctions were fabricated on mercury cadmium telluride layers grown by Molecular Beam Epitaxy. P-type (111)B Hgi_,Cd,Te having an x value gradually increasing to the surface have been grown. The sputtering technique has been used to form the junctions. For the first time, electrical and optical characterizations of a representative junction are presented in this report. The resistance-area product at zero bias and at 80 K is 2.4X103 ohm-cm 2 for x=0.27. The spectral response of this device shows that two junctions, one with x=0.27 and the other with x=0.33, exist. However, Responsivities as high as 7.2 A/W at 80 K were recorded due to the electrically reflecting boundary on the p-type surface.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. S. Yoo, M. Boukerche, M. DeSouza, and J. P. Faurie "Planar Heterojunctions Made On MBE Grown Mercury Cadmium Telluride Using Low Energy Ion Sputtering", Proc. SPIE 1106, Future Infrared Detector Materials, (12 September 1989); https://doi.org/10.1117/12.960640
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