12 September 1989 Room-Temperature Detectors For 800-2600 nm Based On InGaAsP Alloys
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Lattice matched In 53Ga.47As alloys, epitaxially grown on InP substrates are now standard photodetectors for fiber optic and instrumental applications in the 800 - 1700 nm spectral range. Among their chief advantages are high sensitivity, low noise, high speed and room temperature operation. The advent of low loss optical fibers operating at 2500 nm and of near infrared spectroscopy in the 1000 - 2500 nm spectral range makes the extension of responsitivity beyond the standard 1700 nm highly desirable. In this paper, we will discuss the growth and characterization of epitaxial layers of materials such as InxGa1-xAs (x > 0.53) and InAsvP1-y for detectors responding to 2600 nm. Since these materials are not lattice matched to InP substrates, compositional grading epitaxial growth must be employed. Such grading technique enables one to prepare epitaxial layers with different band gaps and thus regulate the responsivity range of detectors produced from these alloys. The grown wafers have been processed into planar detectors with active area of approx 100 μm diameter, which are suitable for fiber optic and other applications. These detectors have been fully characterized for spectral responsivity, quantum efficiency, noise and speed of reponse abd results will be presented. Room temperature values of D* exceeding 1 x 10 11 cmHz1/2W were obtained.
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V. S. Ban, G. Erickson, S. Mason, K. Woodruff, G. Gasparian, G. H. Olsen, "Room-Temperature Detectors For 800-2600 nm Based On InGaAsP Alloys", Proc. SPIE 1106, Future Infrared Detector Materials, (12 September 1989); doi: 10.1117/12.960638; https://doi.org/10.1117/12.960638


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