12 September 1989 The MBE Growth And Electronic Structure Of α-SnxGe1-x Alloys
Author Affiliations +
Proceedings Volume 1106, Future Infrared Detector Materials; (1989); doi: 10.1117/12.960639
Event: SPIE 1989 Technical Symposium on Aerospace Sensing, 1989, Orlando, FL, United States
The MBE growth and electronic structure of a-SnxGe i_x alloy films were studied with RHEED and angle resolved synchrotron radiation photoemission spectroscopy. Doe to an increased interfacial reactivity, CdTe substrates are not suitable for the epitaxial growth of homogeneous films with x>0.1. Alloy films with good crystalline quality can be grown on Ge(100) substrates at approx 400 C. The expected closing of the alloy band gap is confirmed by photoemission data which show the shift of the T8 valence band maximum from -0.6 eV in Ge(100) to -0.16 eV below EF in a-Sn0.48 Ge0.52
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hartmut Hochst, Michael A. Engelhardt, David W. Niles, "The MBE Growth And Electronic Structure Of α-SnxGe1-x Alloys", Proc. SPIE 1106, Future Infrared Detector Materials, (12 September 1989); doi: 10.1117/12.960639; https://doi.org/10.1117/12.960639



Infrared detectors

Temperature metrology


Photoemission spectroscopy

Synchrotron radiation

Back to Top