12 September 1989 The MBE Growth And Electronic Structure Of α-SnxGe1-x Alloys
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Abstract
The MBE growth and electronic structure of a-SnxGe i_x alloy films were studied with RHEED and angle resolved synchrotron radiation photoemission spectroscopy. Doe to an increased interfacial reactivity, CdTe substrates are not suitable for the epitaxial growth of homogeneous films with x>0.1. Alloy films with good crystalline quality can be grown on Ge(100) substrates at approx 400 C. The expected closing of the alloy band gap is confirmed by photoemission data which show the shift of the T8 valence band maximum from -0.6 eV in Ge(100) to -0.16 eV below EF in a-Sn0.48 Ge0.52
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Hartmut Hochst, Michael A. Engelhardt, David W. Niles, "The MBE Growth And Electronic Structure Of α-SnxGe1-x Alloys", Proc. SPIE 1106, Future Infrared Detector Materials, (12 September 1989); doi: 10.1117/12.960639; https://doi.org/10.1117/12.960639
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