Recent developments in Metalorganic Vapour Phase Epitaxy (MOVPE) of CMT are reviewed and the potential of the technology for producing advanced IR cadmium mercury telluride (CMT) detectors, particularly planar diode arrays, are assessed. The assessment covers the current status of layer production, including compositional uniformity, surface quality and crystalline perfection as well as the electrical properties and doping. In addition, the role of the newer, low temperature precursors as a means of producing advanced detector structures are considered. Recent diode results are reported and it is shown that MOVPE CMT, either on CdTe or GaAs substrates, is capable of producing state-of-the-art performance for diode arrays. The future scope of photolysis for in situ device fabrication is also considered, together with some recent results on photo-patterning of epitaxial CdTe.