Thickness dependence of Cr-doped VO2 thin films deposition by reactive pulsed magnetron sputtering

Huan Guan; Dongping Zhang; Jingcheng Jin; Yu Yang; Yi Huang; Qicong He; Ping Fan

doi:10.1117/12.2540082

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8 July 2019 Thickness dependence of Cr-doped VO₂ thin films deposition by reactive pulsed magnetron sputtering

Huan Guan, Dongping Zhang, Jingcheng Jin, Yu Yang, Yi Huang, Qicong He, Ping Fan

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Proceedings Volume 11064, Tenth International Conference on Thin Film Physics and Applications (TFPA 2019); 1106403 (2019) https://doi.org/10.1117/12.2540082
Event: Pacific Rim Laser Damage 2019 and Thin Film Physics and Applications 2019, 2019, Qingdao, China

Abstract

Due to the interesting phase transition properties, Vanadium dioxide is a promising materials for smart windows. But phase transition temperature of 68° is high for this application. Doping is an useful method for transition temperature reducing in previous works. In this paper, different thickness VO₂ films were prepared by reactive pulsed magnetron sputtering, and a novel doping method was employed to reduce transition temperature. The results of XRD, Raman, transmittance spectra, and thermal hysteresis reveal that the transition temperature of un-doped samples is about 54~58°, and the increasing of phase transition amplitude and optical transmittance in visible decreasing with film thickness was observed. While for doped samples, all the transition temperatures reduced below 37°. For the thin thickness 12.5nm and 25nm, which phase transition performance deteriorated seriously. The thickness 25nm deposited for 1.5 h has the optimal performance of high optical transmittance and high IR adjustment ability.

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Huan Guan, Dongping Zhang, Jingcheng Jin, Yu Yang, Yi Huang, Qicong He, and Ping Fan "Thickness dependence of Cr-doped VO₂ thin films deposition by reactive pulsed magnetron sputtering", Proc. SPIE 11064, Tenth International Conference on Thin Film Physics and Applications (TFPA 2019), 1106403 (8 July 2019); https://doi.org/10.1117/12.2540082

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