25 September 1989 Automated Detector Material Characterization Capabilities
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An extensive material characterization facility has been developed to support a modern epitaxial silicon growth laboratory. The growth laboratory provides material for producing impurity band conduction (IBC) IR detector arrays. The laboratory consists of two sections. Material from the research section is used for producing advanced IBC detectors. Material from the manufacturing section is used for producing detector arrays for producibility studies The characterization facility currently includes a computer-controlled variable temperature Hall effect system, a spreading resistance system, and an electrochemical capacitance-voltage dopant profiling device. A low frequency capacitance-voltage system has been assembled from components for specific use with heavily doped silicon exhibiting impurity band conduction. The variable temperature Hall effect measurement allows determination of majority dopant species and concentration, carrier mobility, and total compensation concentration. Spreading resistance yields rapid doping profile measurement of .1 μm to 100 μm thick epitaxial layers. The electrochemical C-V system allows accurate measurement of sharp doping transitions with the capability of 10 Å resolution. The low frequency C-V system can perform measurements on test samples or completed devices to determine compensation concentration for material doped so heavily that impurity band conduction interferes with the ability of the Hall measurement to provide this information. Representative data from each system will be shown and discussed. Application of each measurement to implement material quality control as well as material development will be examined.
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J. E. Venzon, J. E. Venzon, M. H. Young, M. H. Young, R. Baron, R. Baron, O. J. Marsh, O. J. Marsh, } "Automated Detector Material Characterization Capabilities", Proc. SPIE 1108, Test and Evaluation of Infrared Detectors and Arrays, (25 September 1989); doi: 10.1117/12.960687; https://doi.org/10.1117/12.960687

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