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9 September 2019 Effect of substrate temperature variation on the structural and optical properties of self assembled InAs quantum dots
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Abstract
The effect of substrate temperature variation on properties of InAs/GaAs Quantum Dots has been studied. Increase in substrate temperature during growth leads to blue-shift in the PL spectrum which becomes fairly evident after a threshold substrate temperature. Beyond the threshold substrate temperature (beyond 500°C), the effects due to Indium desorption cannot be neglected and hence they contribute to poor optical quality of dots as evident from reduced integrated PL intensity on increasing substrate temperature. AFM measurements also corroborate these findings showing reduced dot size and higher dot density after threshold substrate temperature. We suggest an optimum substrate temperature around 480 ″C for growth process.
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Abhijeet Aanand, Suryansh Dongre, Sanowar A. Gazi, Debabrata Das, Debiprasad Panda, and Subhananda Chakrabarti "Effect of substrate temperature variation on the structural and optical properties of self assembled InAs quantum dots", Proc. SPIE 11085, Low-Dimensional Materials and Devices 2019, 110851D (9 September 2019); https://doi.org/10.1117/12.2529049
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