UV-LED activated semiconductor sensors with tailored structure

Ehsan Espid; Babak Adeli; Fariborz Taghipour

doi:10.1117/12.2536320

9 September 2019 UV-LED activated semiconductor sensors with tailored structure

Ehsan Espid, Babak Adeli, Fariborz Taghipour

Proceedings Volume 11086, UV and Higher Energy Photonics: From Materials to Applications 2019; 110860X (2019) https://doi.org/10.1117/12.2536320
Event: SPIE Nanoscience + Engineering, 2019, San Diego, California, United States

Abstract

A sensitive 1D single crystal ZnO nanostructure gas sensor decorated with Pt nanoparticles was prepared to detect low concentrations of toxic gases at room temperature under UV-LED irradiation. The developed UV-LED activated sensors have a variety of advantages, compared to the traditional high temperature chemi-resistive metal oxide semiconductor (MOS) sensors, such as higher stability, smaller size, lower preparation time, and the ability to safely detect flammable gases. The developed sensing materials were characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) analyses. To obtain a visual evidence of Pt nanoparticles on the surface of ZnO nanowires, high-resolution transmission electron microscopy (HRTEM) and high-angle annular dark-field (HAADF) STEM were employed. The gas sensing results indicated a significant increase (an order of magnitude) in sensor response toward NO2 as a model gas, compared to pristine ZnO sample mainly due to charge carrier enhancement. The effect of UV irradiance was found to play an important role with respect to the sensor response and detection speed.

Citation Download Citation

Ehsan Espid, Babak Adeli, and Fariborz Taghipour "UV-LED activated semiconductor sensors with tailored structure", Proc. SPIE 11086, UV and Higher Energy Photonics: From Materials to Applications 2019, 110860X (9 September 2019); https://doi.org/10.1117/12.2536320

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KEYWORDS

Sensors

Zinc oxide

Platinum

Nanoparticles

Gas sensors

Nanowires

Semiconductors

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