Transition metal dichalcogenide material based tunneling field-effect transistor for label free bio-sensing application

Prabhat Kumar Dubey; Brajesh Kumar Kaushik

doi:10.1117/12.2528301

9 September 2019 Transition metal dichalcogenide material based tunneling field-effect transistor for label free bio-sensing application

Prabhat Kumar Dubey, Brajesh Kumar Kaushik

Author Affiliations +

Proceedings Volume 11087, Biosensing and Nanomedicine XII; 110870U (2019) https://doi.org/10.1117/12.2528301
Event: SPIE Nanoscience + Engineering, 2019, San Diego, California, United States

Abstract

Transition metal dichalcogenides (TMDs) are among the most appealing candidates for sensor applications due to their atomically thin layered structure, dangling bond free surface, and novel physical properties. Recently, TMD materials have been used to improve the performance of devices like metal-oxide semiconductor field-effect transistors (MOSFETs) and tunneling field-effect transistors (TFETs). TMD material based TFETs show a steep subthreshold slope (SS) due to the better gate control on the channel and band-to-band tunneling transport. This makes the TMD TFETs a potential candidate for sensing devices. The steep SS of TFETs and higher gate control is useful for detecting charged biomolecules such as protein and DNA. The presented device shows a SS of 50 mV/decade for 5 decade change in drain current and a sensitivity (ΔI_DS/I_DS) of 2.11 for a 5 mV change in gate voltage. Biomolecules were detected by measuring the variation of the drain current due to bimolecular charge.

Citation Download Citation

Prabhat Kumar Dubey and Brajesh Kumar Kaushik "Transition metal dichalcogenide material based tunneling field-effect transistor for label free bio-sensing application", Proc. SPIE 11087, Biosensing and Nanomedicine XII, 110870U (9 September 2019); https://doi.org/10.1117/12.2528301

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