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10 September 2019 Spin-charge interconversion based on anomalous Hall effect (Conference Presentation)
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Abstract
Recently, spin-charge conversion induced magnetoresistance (MR) in a ferromagnet (FM) or its junction with a heavy metal (HM) has attracted great attention due to its potential applications in spintronics as well as being a powerful technique for studying spin-charge interaction and transport in magnetic thin films and heterostructures. In this talk, I will discuss our recent finding of an MR induced by the anomalous Hall effect (AHE) in a ferromagnet [1]. When a charge current flows in a ferromagnet, both transverse charge and spin accumulations will occur at boundaries of the sample at steady state. The spin accumulation in turn induces a spin current either in an adjacent material or in the ferromagnet itself due to backflow of spin from the boundary. We demonstrate that the spin accumulation, subsequent spin backflow, and spin-charge conversion can give rise to a different type of spin current related magnetoresistance, dubbed as the anomalous Hall magnetoresistance (AHMR), which has the same angular dependence as the recently discovered spin Hall magnetoresistance (SMR). The AHMR is observed in four types of samples: co-sputtered (Fe1-xMnx)0.6Pt0.4, Fe1-xMnx/Pt multilayer, Fe1-xMnx with x = 0.17 – 0.65 and Fe, and analyzed using the drift-diffusion model. The AHMR provides an alternative route to study charge-spin conversion in ferromagnets and to exploit it for potential spintronic applications. In addition to AHMR, I will also discuss spin-torque induced by AHE in both single layer and multilayer structures and its applications in magnetization switching.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yihong Wu, Yumeng Yang, Ziyan Luo, Qi Zhang, and Xinhai Zhang "Spin-charge interconversion based on anomalous Hall effect (Conference Presentation)", Proc. SPIE 11090, Spintronics XII, 110902L (10 September 2019); https://doi.org/10.1117/12.2526554
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