Design and fabrication of high performance spintronic sensors (Conference Presentation)

Weisheng Zhao

doi:10.1117/12.2529784

10 September 2019 Design and fabrication of high performance spintronic sensors (Conference Presentation)

Weisheng Zhao

Proceedings Volume 11090, Spintronics XII; 110903G (2019) https://doi.org/10.1117/12.2529784
Event: SPIE Nanoscience + Engineering, 2019, San Diego, California, United States

Abstract

In this work, a concise method is described for providing multi-axis pinning and used to fabricate two-axis GMR sensors on one wafer. Firstly, a thin film stack with structure of 2Ta/3Ru/7IrMn80/2CoFe10/0.85Ru/2.1CoFe10/1.9Cu/1.2CoFe10/2.5NiFe19/4Ta (layer thickness in nm) is deposited on SiO2 substrate. Then the fabrication process is performed on as-deposited film by three steps of lithography based on a special layout including a full-Wheatstone-bridge sensor and a half-bridge sensor. The patterned devices are annealed in vacuum under a magnetic field of 0.9T along X-axis for 1h, then a field of -80mT for a few minutes before cooling down to room temperature. Through this design, the half-bridge sensor is sensitive to the field in X-axis while the full-bridge one responses only to the field in Y-axis with good performance. The fabrication method is cost-efficient and highly interesting for industrial mass-production. Then a perpendicular TMR sensor is demonstrated using MTJs wih in-plane magnetized free layer and a perpendicularly magnetized reference layer. we studied the free layer CoFeB thickness dependence of tunneling magnetoresistance (TMR) ratio and resistance-area product (RA) in this kind of MTJ. An optimal thickness of free layer to achieve linear response is found.

Conference Presentation

Citation Download Citation

Weisheng Zhao "Design and fabrication of high performance spintronic sensors (Conference Presentation)", Proc. SPIE 11090, Spintronics XII, 110903G (10 September 2019); https://doi.org/10.1117/12.2529784

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